smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon pnp epitaxial planar type 2SB1643 features high collector to emitter v ceo. high collector power dissipation p c. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -6 v collector current i c -3 a peak collector current i cp -6 a base current i b -1 a collector power dissipation t c =25 40 w ta = 25 1.3 w junction temperature t j 150 storage temperature t stg -55to+150 p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base cutoff curent i cbo v cb =-60v,i e = 0 -100 a collector-emitter cutoff curent i ceo v eb =-40v,i c = 0 -100 a emitter-base cutoff current i ebo v eb =-6v,i c = 0 -100 a collector-emitter voltage v ceo i c =-25ma,i b =0 -60 v forward current transfer ratio h fe v ce =-4v,i c = -0.5 a 300 700 collector-emitter saturation voltage v ce(sat) i c =-2a,i b = -0.05 a -1 v transition frequency f t v ce =-12v,i c = -0.2 a , f = 10 mhz 30 mhz h fe classification rank q p h fe 300 500 400 700
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